United Monolithic Semiconductors (UMS) has launched new high power amplifier – CHA6552-QJG. Amplifier is made in the form of monolithic microwave IC on the basis of GaAs technology with integrated power detector. The CHA6552-QJG model is characterized by high linearity and a good return losses.

Main features

• Frequency range: 5.8…8.5 GHz
• Linear gain: 22 dB
• Output power P1dB (6.5 GHz): 36 dBm
• Saturated output power (6.5 GHz): 36.8 dBm
• Output 3-rd order interception point: 45 dBm
• Output return loss: 15 dB
• Power-added efficiency – PAE (6.5 GHz): 31.8%
• Supply voltage: 7 V

Amplifier is supplied in low cost SMD package QFN 6 x 6 mm with 40 leads.

Main application for new amplifier: point to point radio and commercial telecommunication systems.

Radiocomp LLC - the Official Distributor of UMS in Russia - provides with more information on the item.

Data sheet 707 kB