Polyfet RF Devices has released a new high power silicon based transistor, made by LDMOS technology - LS2641. This device is part of Polyfet's latest family of 28 VDC devices.

The new model has a high gain and efficiency, enhanced ESD protection, low noise and high drain breakdown voltage.

Main characteristics:

• output power: 250 W
• frequency range: 1 – 1300 MHz
• minimum gain: 16 dB
• total device dissipation: 500 W
• efficiency: 60 %
• maximum drain to gate and drain to source voltage: 80 V
• saturation current: 29 Amp
• junction to case thermal resistance: 0.35 °С/W
• maximum junction temperature: 200 °С
• dimensions with leads: 34.0 x 19.6 x 4.3 mm

The LS2641 transistor does not contain internal matching elements, so it can be used in both broadband applications (telecommunications, broadcasting systems) and narrowband applications.

Radiocomp, LLC - the Official Distributor of Polyfet RF Devices in Russia - provides with more information on the item.