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Low-noise synthesizer of the Radiocomp LLC with a frequency range up to 20 GHz

16 September 2019. Low-noise synthesizer of the Radiocomp LLC with a frequency range up to 20 GHz

 

SignalCore's New Signal Generator

30 August 2019. SignalCore's New Signal Generator

 

We invite you on August 6, 2019 to the International Workshop on Signal Generation and Frequency Synthesis SGFS-2019

21 May 2019."Learn more about the "International Workshop on Signal Generation and Frequency Synthesis SGFS-2019"

The "Radiocomp" LLC took part in the exhibition "ExpoElectronica-2019"

22 April 2019. The "Radiocomp" LLC took part in the exhibition "ExpoElectronica-2019"

 

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High power transistor from Polyfet RF Devices based on silicon August 20, 2018

Polyfet RF Devices has released a new high power silicon based transistor, made by LDMOS technology - LS2641. This device is part of Polyfet's latest family of 28 VDC devices.

The new model has a high gain and efficiency, enhanced ESD protection, low noise and high drain breakdown voltage.

 

Main characteristics:

  • output power: 250 W
  • frequency range: 1 – 1300 MHz
  • minimum gain: 16 dB
  • total device dissipation: 500 W
  • efficiency: 60 %
  • maximum drain to gate and drain to source voltage: 80 V
  • saturation current: 29 Amp
  • junction to case thermal resistance: 0.35 °С/W
  • maximum junction temperature: 200 °С
  • dimensions with leads: 34.0 x 19.6 x 4.3 mm

The LS2641 transistor does not contain internal matching elements, so it can be used in both broadband applications (telecommunications, broadcasting systems) and narrowband applications.

Radiocomp, LLC - the Official Distributor of Polyfet RF Devices in Russia - provides with more information on the item.


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