United Monolithic Semiconductors (UMS) has released a new high power amplifier - CHA8611-99F. It is made in the form of GaN monolithic microwave IC. The amplifier is implemented according to the two stage scheme. The new model has high output and high power added efficiency (PAE). The amplifier is made in the chip form.

Main features:

• frequency range: 8.5…11 GHz
• linear gain at the pulse/CW mode: 24/23 dB
• output power at the pulse/CW mode: 18/17 W
• PAE: 43 %
• input/output return loss: 10/15 dB
• maximum input power: 33 dBm
• operating temperature range: -40…85 ºС
• maximum junction temperature: 230 ºС
• supply voltage: 25 V
• chip size: 4.36 × 2.57 × 0.10 mm

New amplifier is designed for commercial and professional communications systems equiment.

Radiocomp, LLC - the Official Distributor of United Monolithic Semiconductors in Russia - provides with more information on the item.