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 United Monolithic Semiconductors has released a new high-frequency medium power amplifier - CHA3397-QDG. It is made in the form of GaAs monolithic microwave IC. The amplifier is implemented according to the four stage scheme.
The new model has good linearity, high output and low power consumption. The amplifier is made in SMD leadless package.
Main features:
- frequency range: 36…40.5 GHz
- linear gain: 21 dB
- output power P1dB: 18 dBm
- output third order intercept point (OIP3): 29 dBm
- input/output return loss: 12 dB
- noise figure: 7 dB
- gain control range: 15 dB
- maximum input power: 4 dBm
- supply voltage: 4 V
- operating temperature range: -40…85 ºС
- package type: 24L-QFN
- package size: 4.0 × 4.0 × 0.9 mm
New amplifier is designed for professional communications systems and for commercial communications systems.
Radiocomp, LLC - the Official Disreibutor of United Monolithic Semiconductors in Russia - provides with more information on the item.
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