=== Materials (substrates, laminates, etc.) ===

177 Substrate materials, thin film, micro-circuits (Al2O3, AlN, BeO) fused silica, quartz, sapphire, ferrite, standard sizes =0.5"x1.0", 1"x1", 1"x2", 2"x2", 2.25"x2.25", 2"x3", 3.75"x4.5", standard thicknesses =0.005", 0.010", 0.015", 0.020", 0.025"
409 Substrates and plates. High K substrates are used for circuit miniaturization. Sizes =1"x1", 2"x2", 1.0"x1.5", DiC =8.85, 9.9, 13, 20, 21.8, 25, 39.3, 44, 65, 68, 152
514 Cards (fiberglass metal film, mylar, kapton, MICA resistance), standard size =5"x12", 2"x5", 8"x16", R =50-400 Ohm, DiC =4.8, 3.3, 3.9, 6.0
1233 Resomics ceramics, for MW applications (disc, coax cylinder, TEM mode, substrate, coax support, etc.), DiC =6.4 - 92
1235 Substrates, dielectric, extremely fine surface finish 0.1 to 0.8 mm, DiC =381; 21.41; 921, metalized finishes of Ti, Pd, Au, NiCr and Au are available
1525 Laminates, MW, DiC =2.2 (RT/duroid 5880), 2.33 (RT/duroid 5870), 2.4 -2.6 (ultra lam 2000), 2.94 (RT/duroid 6002), 6.15 (RT/duroid 6006), 10.2 (RT/duroid 6010), 3.27, 4.50, 6.00, 9.20, 9.80 (temperature stable MW laminates TMM)
2070 Dielectric ceramic advanced, MW, for DRO, filters, oscillators, radars, detectors, alarm systems; high quality products of competitive prices
2071 Ferrite materials, MW, for circulators, isolators, phase shifters; low insertion loss, high directivity, compactness, temperature stable
2201 Substrates, temperature compensated stabilized dielectric MW, DiC =38.0, 80.0 and 39.2, Q >3000-10000, TC of DiC =030 and -2510 ppm /C.
2797 Materials. Teflon PTFE (Duroid) laminates, any microwave materials from Rogers, Arlon or Taconic. Thic metal backing: Al, Cu, brass, hard substrates such as ceramics (AL203), ferrites, glass, etc.
2798 Products. Microstrip, bonded stripline thick metal-backed PTFE, mixed dielectric multilayer. Operating F =0.5100 GHz. Prototyping, quickturn, production
3979 Substrates (Alumina 99.5%, sused quartz, beryllia 99.5%, aluminum)
4226 Thermoset laminates and prepregs are based on polymide, epoxy, cyanate ester, and aromatic polyolefin resin systems using standard woven glass substrates as well as specially reinforcements including laser ablateable substrates, S-glass, and quartz
4227 High frequency woven and nonwoven reinforced PTFE specially laminates provide high yields and high performance for temperature and frequency dependent MW applications in military and commercial electronic circuits
4228 Flexible laminates and coatings expertise permits production of a wide range of flexible materials, custom coated to meet application specific needs. Polyester, epoxy, acrylic, and phenolic resin systems allow for a wide range of materials options including use for flexible circuit applications
4229 Adhesive coated copper products offer a wide range of options for applications involving surface layers in multilayer coated printed wiring. High Tg epoxy, phenolic, polyamide, and aromatic polyolefin coatings on all types of copper foil are possible
4689 Substrates, metallized/patterned, high quality in etchable materials, for photolithography reguirements. Substrate (alumina 99.6%), size <4"x4", thicknesses =0.01" 0.015", 0.02", 0.025", metallization (TaN/TiW/Au), line width 7 gap to 0.0005"x0.0001", loss factor =0.001@1 MHz, DiC =9.92@1 MHz, R Tol =1%, TCR =150 ppm/C, TC tracking to 2 ppm/C
4690 Barium titanate metallized plates. These substrates offer microwave designers greater flexibility, for isolators, circulators, stripline filters, couplers, delay lines, resonators, capacitors, sizes =2"x2" to 4"x4", thicknesses =0.01", 0.015", 0.02" 0.025", metallization (TaN/TiW/Au), loss factor =0.001@1 MHz, DiC =20.51.0, 35.01.5, 36.01.5, 39.61.0, 79.03.0@4 GHz, TCR =150 ppm/C, Q factor >1000-10000, TC of resonant frequency =01, 02, 22 ppm/C1000-10000, TC of resonant frequency =01, 02, 22 ppm/C">
4695 Alumina/glass sidewall flatpacks (typical lead spacing as low as 0.02", external lead grounding, seal ring to base grounding, higher operating frequencies, gullwing lead forming, custom plating, thermal solutions, low profile)
5907 Substrate material, thin film, aluminum oxide, purity =99.6 %, dielectric constant@1 MHz =9.90, loss factor@1 MHz =0.001, volume resistivity > 1E15 Ohmcm, specific density =3.88, thermal expansion coefficient =6.8 ppm/C
5908 Substrate material, thin film, aluminum nitride, thin film, dielectric constant@1 GHz =8.6, loss factor@1 GHz =0.005, specific density =3.28, thermal conductivity =170 W/mk, thermal expansion coefficient =4.6 ppm/C
5909 Substrate material, thin film, high purity fused silica, dielectric constant@1 MHz =3.826, loss factor@1 MHz =0.00015, volume resistivity >1E15 Ohmcm, thermal conductivity =0.9 W/mk, thermal expansion coefficient =0.5 ppm/C
5910 Substrate material, thin film, titanium oxide, dielectric constant@7 GHz =38, loss factor@4.5 GHz =0.0001, volume resistivity > 1E13 Ohmvm, thermal conductivity =2.0 W/mk, thermal expansion coefficient =6.5 ppm/C
5911 Substrates, thin film metallization, for microwave amplifiers, oscillators, couplers, filters, attenuators, metallized plates (substrate material: Al2O3, AlN, [Ba]TiO5, glass, quartz), sizes =1x1, 2x2, 2.25x2.25, up to 4x4, thickness =0.005, 0.010, 0.015, 0.025, conductor layer: gold, 99.99%, sputtered or electroplated, thickness =3.5-5.0 um 10%, adhesion layer: titanium tungsten (TiW), resistive layer: tantalum nitride (TaN), resistivity =10 to 200 Ohm/sg, TCR =-15050 ppm/C
5912 Substrates, thin film metallization, for microwave amplifiers, oscillators, couplers, filters, attenuators, patterned and etched substrates, conductor (min 1.00.1 mil line and 0.30.1 mil spacing resistor network =5 Ohm to 2.5 kOhm, resistor tolerance =10% (laser trimmed to0.5%). Pdiss =250 W/(in x in) (on Al2O3), metallized vias-min dia 7 mil, aspect ratio =0.7 (hole dia/substrate thickness), tolerance: hole dia = 2 mil, hole placement =2 mil (center to center)
8165 Magnets, ferrite (ring, square plate, square pillar, round plate, special, conformal insert types). Less expensive than metal magnets. High coercive force retards demagnetization. High electrical resistivity because of oxide magnet. Low specific gravity allows for miniaturization and weight reduction.
11313 Microwave ceramics. Dielectric constant (@ 9.4 GHz) = 4.5 5 %, 6.5 5 %, 7.5 3 %, 9.5 3 %, 10.5 3 %, 13.0 3 %, 16.0 3 %, 20.0 5 %, 30.0 5 %, 40.0 5 %, 50.0 5 %, 80.0 5 %, 100.0 5 %, 140 10 %, 36.0 3 %, 38.0 3 %, dielectric loss ? (2-6) x E-4, coefficient of thermal constant = (2-10) x 1/C x E-6
11314 Microwave ferromagnetic materials (microwave spinels: SN-xxx, SH-xxx, SL-xxx, microwave garnets: GA-xxx, NG-xxx, GI-xxx, GG-xxx, GH-xxx, microwave hexaferrites: Hxx, HDxx )
13783 Substrates, thin & thick film, 99.6% aluminum oxide (Al2O3), surface finish>1 u-inch on both or one side. Back side to have a 10 u-inch nominal or lapped finish, chips<0.025" long on edge of substrate<0.010" into the face of the substrate, size=1.00" Dia through 4.7"x4.7" plates 0.001" through 1% of dimension, thickness = 0.005" 0.0005" to 0.090" 0.0005
13784 Substrates, thin & thick film, aluminum nitride (ALN), purity=98%, density=3.28 g/cmE3, surface finish>2.0 u-inches (polished), 25 u-inches (lapped), 8-24 u-inches (asfired), Tol=1%, 0.010" or 0.01", edge chips=0.025" longx0.010" into face, camber=0.0003-0.0005 inch/inch, thickness=0.004-0.080 inches, size<4 square inches, TCoef expansion (CTE)=4.6x10E-6 (26-300C), thermal conductivity=170 W/mK, dielectric constant=8.6 @ 1 MHz, dissipation factor=0.001 @ 1 MHz
13785 Substrates, thin & thick film, aluminum oxide (Al2O3), purity=96%, density=3.75 g/cmE3, surface finish>5 u-inches (polished), 20 u-inches (lapped), 15-45 u-inches (asfired), Tol=1%, 0.010" or 0.01", camber=0.0005 inch/inch, thickness=0.010-0.250 inches, size=6.50"x7.25", TCoef expansion (CTE)=(6.3-8.0)x10E-6 @ 25-1000C, thermal conductivity=20 W/mK, dielectric constant=9.5 @ 1 MHz, dissipation faqctor=0.0004 @ 1 MHz
13786 Substrates, thin & thick film, aluminum oxide (Al2O3), purity=99.6%, density=3.87 g/cmE3, surface finish>1 u-inches (polished), 10 u-inches (lapped), 2-5 u-inches (asfired), Tol=1%, 0.010" or 0.01", edge chips=0.025" longx0.010" into face, camber=0.0003-0.0005 inch/inch, thickness=0.003-0.110 inches, size=6 square inches, TCoef expansion (CTE)=(7.0-8.3)x10E-6 @ 25-1000C, thermal conductivity=27 W/mK, dielectric constant=9.9 @ 1 MHz, dissipation faqctor=0.0001 @ 1 MHz
13787 Substrates, thin & thick film, beryllium oxide (BeO), purity=99.5%, density=2.85 g/cm3, surface finish=4.0 u-inch (polished), 20-60 u-inch, (lapped), <15 u-inches (asfired), Tol=1%, 0.010" or 0.01", edge chips=0.025" longx0.010" into face, camber=0.0003-0.0005 inch/inch, thickness=0.005-0.125 inches, size<3.5 square inches, TCoef expansion (CTE)=9x10E-6 (25 to 1000C), thermal conductivity=270 W/mK, dielectric constant=6.5 @ 1 MHz, dissipation factor=0.0004 @ 1 MHz
13788 Substrates, thin & thick film, beryllium oxide (BeO), purity=99.5%, surface finish>2 u-in, chips<0.025" long, 0.010" into the face of the substrate, size=1.00"x1.00" up to 4.00"x4.00" 0.002" to 1% of dimension, thickness=0.005" 0.0005" to 0.115" 0.0005".
13789 Substrates, thin & thick film, sapphire (crystalline), Al2O3, purity=100%, density=3.97 g/cmE3, surface finish=1 u-inch (polished), 15-20 u-inch (lapped), Tol=1%, 0.010" or 0.01", edge chips=0.025" (long)x0.010" into face, camber=0.0003-0.0005 inch/inch, thickness=0.003-0.250, TCoef expansion (CTE)=5.3x10E-6, dielectric constant 11.5/9.3EA, dissipation factor=0.00086/0.0003EA, hardness=1800/2200 A knoop
13790 Substrates, thin & thick film, sub micron grain grade, density=13.9-14.0 g/cmE3, Rockwell hardness=89-90.5 ("A" scale), 74-77 ("C" scale), transverse rupture=500000 PSI, compressive strength=650000 PSI, binder=15% cobalt, standard sizes=1.0" sq, 1.25" sq, 1.0" Dia, 1.5" Dia, custom sizes available upon request = from 0.25" to 6.00", thickness =0.005"-0.090", thickness controlled as tight as 0.0003", length and width Tol1% to 0.001", flatness as tight as 0.0002" or 0.005/mm, parallelism as tight as 0.0002" or 0.0051 mm.
13791 Substrates, think & thick film, fused silica/Quartz (SIO2), purity=100%, density=2.2 g/cm3, surface finish (polished)=60/40 optical (scratch & dig), lapped: 7 nominal, Tol=1%, 0.010" or 0.01", edge chips=0.025" (long)x0.010" into (face), camber=0.0003-0.0005 inch/inch, thickness=0.004"-0.100", size<3.25 square Indus, TCoef expansion (CTE)=0.55x10E-6, dielectric constant=3.826 @ 1 MHz, 3.82 @ 24 GHz, dissipation factor=0.000015 @/ MHz, 0.00033 @ 24 GHz, hardness=7 Mohs
15393 Substrates, 96%, alumina (AlO), virtually eliminates irregularities in thickness, surface finish, and camber
15394 Substrates, 99.5% minimum alumina (AlO), high purity alumina ceramics are the most widely used substrates for fabricating thin-film microelectronic circuits
15395 Substrates, 99.99% fused silica (SiO) substrates in commercial and MIL-SPEC grades for a variety of specialized thin film microelectronic applications. These substrates can also be supplied with drilled holes as small as 0.005'' diamater.
15396 Substrates, beryllium oxide (BeO) thin film. In recent years, 99.5% BeO has experienced an upsurge in vsage for substrates, largely due to its nuique thermal transfer characteristics. Hole diameters as small as 0.005? can be laser drilled with diametral tolerances as close as 0.001''
15397 Substrates. Aluminium Nitride (AlN) is a substrate material which is gaining popularity in the electronics industry. AlN has a high themal conductivity and is a good thermal expansion match to silicon. AlN is also non-toxic which allows user to matchine, diamond saw, laser cut, and trim with the same health prescautions used for alumina.
15398 Substrates. Sapphire is commonly used for silicon-on-sapphire (SOS) wafer for integrated circuits (IC), as well as for hybrid circuits. The material has an intrinsic hihj dielectronic and can provide ultra-smooth, zero-porosity substrate surface in varions crystal orientations. SOS, Ics made with sapphire blanks are high speed, low power devices which can be made radiation-resistant for use in satallites and military applications.
20327 Speciality materials for personal/healthcare and medical device applications (medical urethanes, polyolefins, nonwovens, silicones, industrial urethanes, moldable elastomers)
20609 ElectroSeal conductive elastomer material are ideal for both military and commercial applications requiring both environmental sealing and EMI shielding, available in a wide variety of conductive filter materials, shielding effectiveness up to 120 dB at 10 GHz. Compounds can be supplied in molded or extruded shapes, sheet stock, custom extruded, or die-cut shapes to meet a wide variety of applications.
20790 Copper clad laminates, made from the engineering amorphous thermoplastic PEI (polyetherimide), have isotropic electrical and mechanical properties with exceptional thermal stability. F=3-3000 MHz, dielectric constant=0.0013@1 kHz, 0.003@3 GHz, -55 to +75C
20995 Suspended substrate, compact design high reliability, easily fabricated, F =0.3-40 GHz, stripline filters, couplers, power dividers, and amplitude equalizers can be readily realized in suspended substrate
22214 Materials, excellent high frequency performance due to low dielectric tolerance and loss, stable electrical properties versus frequency, low thermal coefficient of dielectric constant, excellent dimensional stability. Applications: direct broadcast satellites, microstrip and cellular base station antennas and power amplifiers, spread spectrum communications systems, RF identification tags, automated test equipment, high frequency automotive electronics. Dielectric constant=3.88 & 3.48, dissipation factor=0.0027 & 0.0037, thermal coefficient=+40 & +50 ppm/C, dimensional Stab=<0.3 & 0.5 mm/m, thermal conductivity=0.64 & 0.62 W/m/K, density=1.79 & 1.86 gm/cubic cm
22724 POLYGUIDE clad laminates and dielectrics are recommended for microwave and UHF applications where optimal low-loss operation is a primary requirement. Both products have been specially developed to provide a superior combination of electrical, physical and chemical characteristics most suitable for microstrip, coplanar wave guide and other demanding uses. POLYGUIDE clad laminates and dielectrics are precision fabricated from the highest quality, high density polyolefin available. Clad and unclad POLYGUIDE dielectrics are and highly resistant to chemical attack. Both clad and unclad POLYGUIDE are easily and accurately routed, punched or drilled using standard shop techniques. F < 10 GHz, dielectric constant=2.32, water absorption < 0.01%, dissipation factor=0.00020.00020.00005@1 MHz, -55 to +85C
22725 Substrates, made from the thermoplastic PPO (polyphenylene oxide), have an ideal dielectric constant of 2.55, very uniform and reproducible electrical properties, and are very stable both dimensionally and over temperature. F < 3 GHz, -55 to +125C
22726 Substrates, microwave. The pure PTFE material with a dielectric constant of 2.1 and a maximum peak dissipation factor of 0.00045 (at 1 to 3 GHz), is available in standard and custom dielectric thickness (0.00025''to 0.005'' and 0.010 ''to 0.125''), with double sided copper, in a standard range of copper plated claddings which includes 1/3 oz (0.5 mil), ? oz (0,7 mil), 1 oz (1,4 mil), and 2 oz (2.8 mil), F<18 GHz, -55 to +175C
23012 RF and microwave absorbers, consists of a 5 to 1 pure iron oxide powder mixer with various catalysis to form a flexible material than is nonconductive. Material is used in the RF and microwave industry to absorb unwanted microwaves and lower surface currents. Typical frequency range is 100 MHz to 40 GHz. The lower the frequency, the thicker the material used to absorb without allowing the microwaves to pass through. Applications: EMI/RFI, RAM-radar absorbing material, mode/harmonic suppression, cross talk elimination, signal noise reduction. Resistivity=E12 Ohm-cm, Imp=50 Ohm, dielectric strength>500 V/cm, C(bulk)=146-165 pF/cm
23246 Epoxy substrate suitable for use in applications that demand high thermal reliability without sacrificing electrical performance. The high thermal resistance, coupled with superior electrical properties, enables designers to convert their products from a brominated high Tg FR4 base to a Pb-free compatible, halogen-free base. Thickness=0.025'', retained resin=58%, permittivity=3.80@2 GHz, 3.80@5 GHz, 3.90@10 GHz, loss tangent=0.013@2 GHz, 0.014@5 GHz, 0.014@10 GHz, volume resistivity=2E6 MOhm?cm, surface resistivity=1E7 MOhm, peel strength=650 N/mm sq (LW), 450 N/mm sq, moisture absorption=0.10%
23247 Laminate & prepreg, high performance, FR-4 epoxy, for advanced circuitry applications. Its low dielectric constant and low dissipation factor make in an ideal candidate for broadband circuit designs requiring faster signal speed or improved signal integrity. Thickness=0.2 mm, retained resin=442%, permittivity=3.8@1 MHz, 3.7@1 GHz, loss tangent=0.010@1-1000 MHz, volume resistivity=1E8 MOhm?cm, surface resistivity=1E8 MOhm, electric strength=5.5E4 V/mm, arc resistance=120 s, peel strength=80 kg/m, moisture absorption=0.45%
23248 Laminate and prepreg, high thermal performance, improved dielectric properties, utilizes conventional FR-4 processes, all typical thicknesses and standard panel sizes, for high-speed applications ranging from 2 to 15 GHz. Thickness=0.2 mm, retained resin=50%, permittivity=3.78@2 GHz, 3.77@5 GHz, 3.76@10 GHz, loss tangent=0.0086@2 GHz, 0.0088@5 GHz, 0.0089@10 GHz, volume resistivity=8.89?10E8 MOhm?cm, surface resistivity=2.21E6 MOhm, electric strength=1400 V/mil, arc resistance=110 s, peel strength=125 kg/m
23249 Laminate, temperature-resistant base material with low Z-axis expansion, high thermal resistance, CAF-resistant, smooth surface, dimensionally stable. Applications: high layer count multilayer, automobile electronics, fine-line structures, high temperature electronics. Thickness<0.50 mm, peel strength>1.3 N/mm, volume resistivity=3.1E7 MOhm?cm, surface resistivity=6E7 MOhm, permittivity@1 MHz=4.8-5.1, loss tangent@1 MHz=0.013-0.015, electric strength=42.6 kV/mm
23250 Laminate, temperature-resistant base material with low Z-axis expansion, high thermal resistance, CAF-resistant, smooth surface, dimensionally stable. Applications: high layer count multilayer, automobile electronics, fine-line structures, high temperature electronics. Thickness?0.50 mm, peel strength>1.3 N/mm, volume resistivity=2.7E7 MOhm?cm, surface resistivity=3.4E6 MOhm, dielectric breakdown=49.3 kV, permittivity@1 MHz=4.8-5.1, loss tangent@1 MHz=0.013-0.015
23251 Laminates and preprags, is a base material of type FR-4. the resin matrix is based on a phosphorus-modified epoxy resin; conventional E-glass-fabric is used for reinforcement. Laminate thickness<0.50 mm, peel strength=1.2-0.9 N/mm, volume resistivity=2.0E7 MOhm?cm, surface resistivity=10E7 MOhm, permittivity@1 MHz=4.6-4.9, loss tangent@1 MHz=0.020, dielectric breakdown=36 kV/mm
23252 Laminates and preprags, is a base material of type FR-4. the resin matrix is based on a phosphorus-modified epoxy resin; conventional E-glass-fabric is used for reinforcement. Laminate thickness?0.50 mm, peel strength=1.1 N/mm, volume resistivity=2.8E6 MOhm?cm, surface resistivity=10E6 MOhm, moisture absorption=0.23%, dielectric breakdown=46 kV, permittivity@1 MHz=4.6-4.9, loss tangent@1 MHz=0.020
23253 Prepreg and copper clad laminates, for high temperature printed circuit applications. These products consist of a flame resistance, polyimide resin system suitable for military, commercial or industrial electronic applications, requiring superior performance and the almost in thermal properties. They utilize a polyimide and thermoplastic blend resin, fully cured without the use of methylene dianiline. This results in a polymer with a high Tg without the characteristic difficulties of brittleness and low initial bond strength associated with traditional thermoset polyimides. Thickness=0.2 mm, retained resin=47%, permittivity=4.6@1 MHz, 4.0@500 MHz, 4.0@1 GHz, loss tangent=0.014@1 MHz, 0.012@500 MHz, 0.014@1 GHz, surface resistivity=3E6 MOhm, volume resistivity=1.5E9 MOhm?cm, electric strength=1424 V/mil, arc resistance=135 s, peel strength=90 kg/m


  
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